421 research outputs found

    Periodic chiral magnetic domains in single-crystal nickel nanowires

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    We report on experimental and computational investigations of the domain structure of ~0.2 x 0.2 x 8 {\mu}m single-crystal Ni nanowires (NWs). The Ni NWs were grown by a thermal chemical vapor deposition technique that results in highly-oriented single-crystal structures on amorphous SiOx coated Si substrates. Magnetoresistance measurements of the Ni NWs suggest the average magnetization points largely off the NW long axis at zero field. X-ray photoemission electron microscopy images show a well-defined periodic magnetization pattern along the surface of the nanowires with a period of {\lambda} = 250 nm. Finite element micromagnetic simulations reveal that an oscillatory magnetization configuration with a period closely matching experimental observation ({\lambda} = 240 nm) is obtainable at remanence. This magnetization configuration involves a periodic array of alternating chirality vortex domains distributed along the length of the NW. Vortex formation is attributable to the cubic anisotropy of the single crystal Ni NW system and its reduced structural dimensions. The periodic alternating chirality vortex state is a topologically protected metastable state, analogous to an array of 360{\deg} domain walls in a thin strip. Simulations show that other remanent states are also possible, depending on the field history. Effects of material properties and strain on the vortex pattern are investigated. It is shown that at reduced cubic anisotropy vortices are no longer stable, while negative uniaxial anisotropy and magnetoelastic effects in the presence of compressive biaxial strain contribute to vortex formation.Comment: 15 pages, 11 figure

    Charge storage in nanocrystal systems: Role of defects?

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    Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide with Ge nanocrystallites embedded in the oxide matrix was obtained. A trilayer gate stack structure that consisted of tunnel oxide/oxidized polycrystalline Si₀.₅₄Ge₀.₄₆/rf sputtered SiO₂ layers was fabricated. We found that with a 30 min oxidized middle layer, annealing the structure in N₂ ambient results in the formation of germanium nanocrystals and the annealed structure exhibits memory effect. For a trilayer structure with middle layer oxidized for 50 min, annealing in N₂ showed no nanocrystal formation and also no memory effect. Annealing the structures with 30 or 50 min oxidized middle layer in forming gas ambient resulted in nanocrystals embedded in the oxide matrix but no memory effect. This suggests that the charge storage mechanism for the trilayer structure is closely related to the interfacial traps of the nanocrystals.Singapore-MIT Alliance (SMA

    The Radial Orbit Instability in Collisionless N-Body Simulations

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    Using a suite of self-gravitating, collisionless N-body models, we systematically explore a parameter space relevant to the onset and behavior of the radial orbit instability (ROI), whose strength is measured by the systemic axis ratios of the models. We show that a combination of two initial conditions, namely the velocity anisotropy and the virial ratio, determines whether a system will undergo ROI and exactly how triaxial the system will become. A third initial condition, the radial shape of the density profile, plays a smaller, but noticeable role. Regarding the dynamical development of the ROI, the instability a) begins after systems collapse to their most compact configuration and b) evolves fastest when a majority of the particles have radially anisotropic orbits while there is a lack of centrally-concentrated isotropic orbits. We argue that this is further evidence that self-reinforcing torques are the key to the onset of the ROI. Our findings support the idea that a separate orbit instability plays a role in halting the ROI.Comment: accepted for publication in ApJ. 9 figures in emulateapj styl

    Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

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    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.Singapore-MIT Alliance (SMA

    Single-Cell Phenotyping within Transparent Intact Tissue through Whole-Body Clearing

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    Understanding the structure-function relationships at cellular, circuit, and organ-wide scale requires 3D anatomical and phenotypical maps, currently unavailable for many organs across species. At the root of this knowledge gap is the absence of a method that enables whole-organ imaging. Herein, we present techniques for tissue clearing in which whole organs and bodies are rendered macromolecule-permeable and optically transparent, thereby exposing their cellular structure with intact connectivity. We describe PACT (passive clarity technique), a protocol for passive tissue clearing and immunostaining of intact organs; RIMS (refractive index matching solution), a mounting media for imaging thick tissue; and PARS (perfusion-assisted agent release in situ), a method for whole-body clearing and immunolabeling. We show that in rodents PACT, RIMS, and PARS are compatible with endogenous-fluorescence, immunohistochemistry, RNA single-molecule FISH, long-term storage, and microscopy with cellular and subcellular resolution. These methods are applicable for high-resolution, high-content mapping and phenotyping of normal and pathological elements within intact organs and bodies
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